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Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

A.S. SaidovPhysical–Technical Institute, Uzbekistan Academy of Sciences, Chingiz Aytmatov Street 2B, Tashkent 100084, UzbekistanD. V. SaparovPhysical–Technical Institute, Uzbekistan Academy of Sciences, Chingiz Aytmatov Street 2B, Tashkent 100084, UzbekistanSh. N. UsmonovPhysical–Technical Institute, Uzbekistan Academy of Sciences, Chingiz Aytmatov Street 2B, Tashkent 100084, UzbekistanA. Sh. RazzakovDepartment of Physics, Urgench State University, Khamid Alimdjan Street 14, Urgench 220100, UzbekistanM. U. KalanovInstitute of Nuclear Physics

International Journal of Modern Physics Bjournal2022en

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ABI

Annotatsiya

In this work, the physical features of growing epitaxial layers of new solid solutions of (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] from the liquid phase of the tin solution-melt on GaAs (100) substrates were investigated. The conditions required for the formation of the solid solution of molecular substitution were revealed. A possible configuration of the crystal structure of the solid solution (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] is presented. In the spectral photosensitivity of the [Formula: see text]-GaAs–[Formula: see text]-(GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] structures, peaks with maxima at photon energies of 1.37 eV and 2.62 eV were found. The band diagram of the solid solution (GaAs)[Formula: see text](Ge[Formula: see text](ZnSe)[Formula: see text] was presented.

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Mavzular

Chalcogenide Semiconductor Thin Films Solid-state spectroscopy and crystallography Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1142/s0217979223501321

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