Ushbu ishga iqtibos qilgan ishlar

7 ta ish

Ish: Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties

1. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, A.S. Saidov, Sh. N. Usmonov +3

   PreprintOAOchiq kirishGaN-based semiconductor devices and materialsResearch Square20230 iqtibos

   ABIABI:AkademIndex/2023.preprint.000184

2. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

   A.S. Saidov, Shukrullo Usmonov, D. V. Saparov +4

   MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20240 iqtibos

   ABIABI:AkademIndex/2024.article.009139

3. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

   A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos

   ABIABI:AkademIndex/2025.article.007804

4. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Girzhon, I. Shtablavyi

   MaqolaSilicon Nanostructures and PhotoluminescenceVacuum20250 iqtibos

   ABIABI:AkademIndex/2025.article.008005

5. Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

   Khurshidjon M. Madaminov, Avazbek Sh. Ikromov, Azizbek A. Abdurakhmonov

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009021

6. Theoretical and experimental study of the structure of (Ge2)1–x–y(GaAs)x(ZnSe)y solid solution

   A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov +4

   MaqolaOAOchiq kirish20250 iqtibos

   ABIABI:AkademIndex/2025.article.028398

7. The Influence of γ-Irradiation on the Current Transport Mechanism upon the Application of Reverse Bias to the Al/p-CdTe/Mo Structure

   A. S. Achilov, R. R. Kabulov, O. A. Abdulkhaev +4

   MaqolaAdvanced Semiconductor Detectors and MaterialsSurface Engineering and Applied Electrochemistry20260 iqtibos

   ABIABI:AkademIndex/2026.article.010008