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A. Sh. Razzokov

18 ta ish

Urganch davlat universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    A.S. Saidov, A. Sh. Razzokov

    MaqolaSemiconductor materials and interfacesCrystallography Reports20227 iqtibos
    ABI

  2. Features of growing Si- and Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>-single-crystal films from solution-melt based on tin

    A. Sh. Razzokov, A.S. Saidov, V. V. Girzhon +1

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20226 iqtibos
    ABI

  3. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1

    MaqolaOchiq kirishSemiconductor materials and interfacesActa Physica Polonica A20224 iqtibos
    ABI

  4. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20234 iqtibos
    ABI

  5. Оbtaining and Electrophysical Properties of (Ge2)1 – x(GaAs)x Solid Solutions

    A. Sh. Razzokov, A.S. Saidov, D.E. Koshchanova +2

    Maqola20252 iqtibos
    ABI

  6. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

    A. Sh. Razzokov, Khushnudbek Eshchanov

    MaqolaOchiq kirishPhotonic and Optical DevicesInternational Journal of Thermodynamics20221 iqtibos
    ABI

  7. THERMODYNAMIC BASES OF OBTAINING CRYSTALLINE PERFECT SILICON FROM SOLUTION-MELT

    Khushnudbek Eshchanov, A. Sh. Razzokov

    MaqolaSolidification and crystal growth phenomena20210 iqtibos
    ABI

  8. Thermodynamic Bases for Obtaining Crystalline Perfect Silicon from Tin-silicon Solution

    A. Sh. Razzokov, Khushnudbek Eshchanov

    MaqolaOchiq kirishHermeneutics and Narrative IdentityDergiPark (Istanbul University)20210 iqtibos
    ABI

  9. Growth of Epitaxial Layers of the Si&lt;sub&gt;1-x-y&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;Sn&lt;sub&gt;y&lt;/sub&gt; Solid Solution from a Tin Solution-Melt

    A. Sh. Razzokov

    MaqolaOchiq kirishPhotonic and Optical DevicesSiberian Journal of Physics20230 iqtibos
    ABI

  10. Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent

    A. Sh. Razzokov, Khushnudbek Eshchanov

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesProceedings of Pakistan Academy of Sciences A Physical and Computational Sciences20240 iqtibos
    ABI

  11. Влияние кластерообразования компонентов при выращивании варизонного твердого раствора Si1-xGex из оловянного раствора-расплава

    A. Sh. Razzokov, А.А. Саидов, С.И. Петрушенко +3

    Maqola20240 iqtibos
    ABI

  12. STUDYING THE GROWTH MECHANISMS OF Si EPITAXIAL LAYERS FROM A LIMITED VOLUME OF Si-Sn SOLUTION USING THEORETICAL CALCULATIONS AND THE SEDIMENTATION METHOD

    A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov

    MaqolaOchiq kirishAnodic Oxide Films and NanostructuresInternational Journal of Mathematics and Physics20250 iqtibos
    ABI

  13. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

    MaqolaOchiq kirishGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos
    ABI

  14. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

    A. Sh. Razzokov, V. V. Girzhon, I. Shtablavyi

    MaqolaSilicon Nanostructures and PhotoluminescenceVacuum20250 iqtibos
    ABI

  15. Theoretical and experimental study of the structure of (Ge2)1–x–y(GaAs)x(ZnSe)y solid solution

    A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov +4

    MaqolaOchiq kirish20250 iqtibos
    ABI

  16. Growing Ge1-xSnx solid solutions on Ge, GaAs substrates

    A. Sh. Razzokov, M.A. Shonazarova, J.A. Razzakov

    MaqolaOchiq kirish20250 iqtibos
    ABI

  17. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

    A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

    BobSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 iqtibos
    ABI

  18. Growth and structural study of (Si2)1-x(GaP)x solid solution

    Amin Saidov, A. Sh. Razzokov, Shukrullo Usmonov +3

    Maqola20260 iqtibos
    ABI