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С.И. Петрушенко

5 ta ish

V. N. Karazin Kharkiv National University

AkademScholarda batafsil koʻrsatkichlar

  1. Obtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle

    A.S. Saidov, A. Sh. Razzokov, С.И. Петрушенко +1

    MaqolaOchiq kirishSemiconductor materials and interfacesActa Physica Polonica A20224 iqtibos
    ABI

  2. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20234 iqtibos
    ABI

  3. Влияние кластерообразования компонентов при выращивании варизонного твердого раствора Si1-xGex из оловянного раствора-расплава

    A. Sh. Razzokov, А.А. Саидов, С.И. Петрушенко +3

    Maqola20240 iqtibos
    ABI

  4. Theoretical and experimental study of the structure of (Ge2)1–x–y(GaAs)x(ZnSe)y solid solution

    A. Sh. Razzokov, Khushnudbek Eshchanov, A.S. Saidov +4

    MaqolaOchiq kirish20250 iqtibos
    ABI

  5. Growing Si–Si 1− x Ge x –(Ge 2 ) 1− y (GaAs) y structures in a single technological cycle

    Alijon S. Razzokov, С.И. Петрушенко, Mateusz Fijałkowski +1

    MaqolaOchiq kirish20260 iqtibos
    ABI