Theoretical Evaluation of Silicon Crystal Growth Using Gallium Solvent

Semiconductor materials are of great importance throughout the world. Silicon crystals are this field's most widely used and relatively inexpensive material. Obtaining low-dislocation and defect-free silicon crystals is one of the current issues, and we theoretically investigated the production of low-defect silicon crystals from silicon-gallium melt. We considered the defects that appear in the silicon crystals grown from the solution related to the large-sized silicon nanoclusters involved in the crystal formation based on the obtained results, we showed the conditions for obtaining silicon crystals with few defects from the silicon-gallium solution.

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