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Xizmatlar

A. Sh. Razzakov

11 ta ish

Urganch davlat universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    A.S. Saidov, A. Sh. Razzakov, V.A. Risaeva +1

    MaqolaChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200126 iqtibos
    ABI

  2. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202113 iqtibos
    ABI

  3. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20227 iqtibos
    ABI

  4. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    A.S. Saidov, A. Sh. Razzakov, D. V. Saparov

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20022 iqtibos
    ABI

  5. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    A.S. Saidov, É. A. Koshchanov, A. Sh. Razzakov

    MaqolaPhase-change materials and chalcogenidesTechnical Physics Letters19982 iqtibos
    ABI

  6. Liquid phase epitaxy of (GaAs)1−x(ZnSe)x solid solution layers from a lead-based solution melt

    A.S. Saidov, A. Sh. Razzakov, Kurban Gaimnazarov

    MaqolaChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20012 iqtibos
    ABI

  7. Liquid phase epitaxy of Ge1−xSnx semiconductor films

    A.S. Saidov, A. Sh. Razzakov, É. A. Koshchanov

    MaqolaPhotonic and Optical DevicesTechnical Physics Letters20012 iqtibos
    ABI

  8. Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase

    A.S. Saidov, É. A. Koshchanov, A. Sh. Razzakov +1

    MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 iqtibos
    ABI

  9. Growth of Ge1−xSnnx solid solutions from the liquid phase

    A. Sh. Razzakov

    MaqolaPhotonic and Optical DevicesDoklady Physics20010 iqtibos
    ABI

  10. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 iqtibos
    ABI

  11. Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

    A. Sh. Razzakov, A. Latipova, Alibek Qodirov

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesBulletin of Science and Practice20210 iqtibos
    ABI