É. A. Koshchanov

3 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

1. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

   A.S. Saidov, É. A. Koshchanov, A. Sh. Razzakov

   MaqolaPhase-change materials and chalcogenidesTechnical Physics Letters19982 iqtibos

   ABIABI:AkademIndex/2026.other.386203

2. Liquid phase epitaxy of Ge1−xSnx semiconductor films

   A.S. Saidov, A. Sh. Razzakov, É. A. Koshchanov

   MaqolaPhotonic and Optical DevicesTechnical Physics Letters20012 iqtibos

   ABIABI:AkademIndex/2026.other.534934

3. Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase

   A.S. Saidov, É. A. Koshchanov, A. Sh. Razzakov +1

   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000179