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Xizmatlar

A. Yu. Leyderman

12 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

AkademScholarda batafsil koʻrsatkichlar

  1. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
    ABI

  2. Study of the current-voltage characteristic of the n-CdS/p-CdTe heterostructure depending on temperature

    Sh. N. Usmonov, Ш. А. Мирсагатов, A. Yu. Leyderman

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20108 iqtibos
    ABI

  3. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  4. The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)

    A.S. Saidov, A. Yu. Leyderman, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsTechnical Physics Letters20164 iqtibos
    ABI

  5. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20184 iqtibos
    ABI

  6. Features of polycrystalline silicon fabricated by fivefold remelting in a solar furnace

    A.S. Saidov, A. Yu. Leyderman, Sh. T. Manshurov

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20103 iqtibos
    ABI

  7. Non-recombination injection mode

    A. Yu. Leyderman, R. A. Ayukhanov, R.M. Turmanova +2

    Maqola20213 iqtibos
    ABI

  8. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    MaqolaOchiq kirishIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering20211 iqtibos
    ABI

  9. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +4

    MaqolaOchiq kirishSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos
    ABI

  10. Determining certain physical settings of photocells

    A. Yu. Leyderman

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20110 iqtibos
    ABI

  11. Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

    A. Yu. Leyderman, A.K. Uteniyazov, M.T. Nsanbaev

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics20200 iqtibos
    ABI

  12. Sarlavhasiz

    A.K. Uteniyazov, A. Yu. Leyderman, R. A. Ayukhanov +25

    BoshqaOchiq kirishAdvanced Semiconductor Detectors and MaterialsSemiconductor Physics Quantum Electronics & Optoelectronics20200 iqtibos
    ABI