The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1)
A.S. SaidovPhysicotechnical Institute, Solar Physics Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 700084, UzbekistanA. Yu. LeydermanPhysicotechnical InstituteA. B. KarshievPhysicotechnical Institute
Ochiq kirish: yoʻq
ABI
Annotatsiya
The thermovoltaic effect in films of variband solid solution Si1–x Ge x (0 ≤ x ≤ 1) has been observed for the first time. The samples comprised n-Si–p-Si1–x Ge x (0 ≤ x ≤ 1) heterostructures grown by liquid phase epitaxy. An electromotive force within 0.05–0.3 mV and a current of 0.0025–0.0035 μA appeared on heating samples in a temperature range from 40 to 250°C.
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