Maqola

Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

V. I. VdovinInstitute of Rare Metals, 109017 Moscow, Russian FederationM. G. Mil’vidskiĭInstitute of Rare Metals, 109017 Moscow, Russian FederationT. G. YugovaInstitute of Rare Metals, 109017 Moscow, Russian FederationK. LyutovichInstitute of Electronics, Uzbek Academy of Sciences, 700143 Tashkent, UzbekistanSafo SaidovInstitute of Electronics, Uzbek Academy of Sciences, 700143 Tashkent, Uzbekistan

Journal of Crystal Growthjournal1994en

Ochiq kirish: yoʻq

ABI

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Annotatsiya mavjud emas.

Mavzular

Semiconductor materials and interfaces Advanced Materials Characterization Techniques Electron and X-Ray Spectroscopy Techniques

Identifikatorlar

DOI: 10.1016/0022-0248(94)90100-7

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