N. M. Mustafoeva

11 ta ish

Qarshi Davlat Universiteti

1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   MaqolaSemiconductor materials and interfacesSemiconductors20204 iqtibos

   ABIABI:AkademIndex/2026.other.402217

2. Electronic and Optical Properties of NiSi2/Si Nanofilms

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

   MaqolaSurface and Thin Film PhenomenaTechnical Physics20193 iqtibos

   ABIABI:AkademIndex/2026.other.402216

3. Влияние разупорядочения тонких поверхностных слоев на электронные и оптические свойства Si (111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   MaqolaOAOchiq kirish20201 iqtibos

   ABIABI:AkademIndex/2026.other.751577

4. Формирование Нанопленок CoSi2 На Поверхности Si При Твердофазном Осаждении

   A. K. Tashatov, N. M. Mustafoeva

   MaqolaOAOchiq kirish20220 iqtibos

   ABIABI:AkademIndex/2022.article.028086

5. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 iqtibos

   ABIABI:AkademIndex/2023.article.007102

6. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

   MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos

   ABIABI:AkademIndex/2024.article.010336

7. ШИРИНА ЗАПРЕЩЕННОЙ ЗОНЫ СКРЫТЫХ НАНОКРИСТАЛЛОВ NiSi2, СОЗДАННЫХ В ПРИПОВЕРХНОСТНОЙ ОБЛАСТИ Si

   A. K. Tashatov, Ёкуб ЭРГАШОВ, N. M. Mustafoeva

   MaqolaOAOchiq kirish20240 iqtibos

   ABIABI:AkademIndex/2024.article.018534

8. STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

   N. M. Mustafoeva, A. K. Tashatov, Bünyamin Şahin

   BoshqaOAOchiq kirishZenodo (CERN European Organization for Nuclear Research)20260 iqtibos

   ABIABI:AkademIndex/2026.other.856361

9. STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

   N. M. Mustafoeva, A. K. Tashatov, Bünyamin Şahin

   BoshqaZenodo (CERN European Organization for Nuclear Research)20260 iqtibos

   ABIABI:AkademIndex/2026.other.856984

10. SCIENTIFIC AND METHODOLOGICAL BASIS FOR THE APPLICATION OF ARTIFICIAL INTELLIGENCE IN TEACHING PHYSICAL ELECTRONICS

    N. M. Mustafoeva

    BoshqaOAOchiq kirishZenodo (CERN European Organization for Nuclear Research)20260 iqtibos

    ABIABI:AkademIndex/2026.other.858544

11. SCIENTIFIC AND METHODOLOGICAL BASIS FOR THE APPLICATION OF ARTIFICIAL INTELLIGENCE IN TEACHING PHYSICAL ELECTRONICS

    N. M. Mustafoeva

    BoshqaZenodo (CERN European Organization for Nuclear Research)20260 iqtibos

    ABIABI:AkademIndex/2026.other.859782