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Xizmatlar

Jo`shqin Abdullayev

17 ta ish

Oʻzbekiston Milliy Universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos
    ABI

  2. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202417 iqtibos
    ABI

  3. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Maqola202415 iqtibos
    ABI

  4. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos
    ABI

  5. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202513 iqtibos
    ABI

  6. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos
    ABI

  7. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology202411 iqtibos
    ABI

  8. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics202510 iqtibos
    ABI

  9. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  10. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  11. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos
    ABI

  12. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos
    ABI

  13. Bandgap-Engineered pSi/n-CdₓS₁₋ₓ Heterojunctions: Effect of Composition on Optoelectronic Behavior

    I. B. Sapaev, Jamoliddin I. Razzokov, Jo`shqin Abdullayev +2

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20255 iqtibos
    ABI

  14. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos
    ABI

  15. Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions

    Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2

    PreprintOchiq kirishSemiconductor materials and interfacesSSRN Electronic Journal20250 iqtibos
    ABI

  16. Self-Consistent Fowler–Nordheim Tunneling Modeling in Si/GaAs Heterostructures with Optimized Nanoscale Meshing

    Jo`shqin Abdullayev, L.K. Babajanov, N.P. Babayazova +3

    MaqolaOchiq kirish20260 iqtibos
    ABI

  17. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

    MaqolaOchiq kirish20260 iqtibos
    ABI