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Xizmatlar

Jonibek Sh. Abdullayev

18 ta ish

Oʻzbekiston Milliy Universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

    I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 iqtibos
    ABI

  2. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos
    ABI

  3. On volumes of matrix ball of third type and generalized Lie balls

    U. S. Rakhmonov, Jonibek Sh. Abdullayev

    Maqola20197 iqtibos
    ABI

  4. Holomorphic continuation into a matrix ball of functions defined on a piece of its skeleton

    G. Khudayberganov, Jonibek Sh. Abdullayev

    MaqolaOchiq kirishHolomorphic and Operator TheoryVestnik Udmurtskogo Universiteta Matematika Mekhanika Komp yuternye Nauki20216 iqtibos
    ABI

  5. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos
    ABI

  6. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20264 iqtibos
    ABI

  7. Cryogenic Material and Electrophysical Changes in Si and GaAs

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20264 iqtibos
    ABI

  8. Relationship Between the Bergman and Cauchy-Szeg¨o Ker- nels in the Domains + (n -1) and ℜn I V

    Gulmirza Kh. Khudayberganov, Jonibek Sh. Abdullayev

    MaqolaOchiq kirishHolomorphic and Operator TheoryJournal of Siberian Federal University Mathematics & Physics20204 iqtibos
    ABI

  9. Functional Properties of the Bergman Kernel in the Space $${{\boldsymbol{\mathbb{C}}}^{\boldsymbol{n}}}\boldsymbol{[m\times m]}$$

    G. Kh. Khudayberganov, Jonibek Sh. Abdullayev, U. S. Rakhmonov

    MaqolaHolomorphic and Operator TheoryLobachevskii Journal of Mathematics20253 iqtibos
    ABI

  10. Laplace and Hua Luogeng Operators

    G. Khudayberganov, Askar Maxsetbaevich Khalknazarov, Jonibek Sh. Abdullayev

    MaqolaStochastic processes and financial applicationsRussian Mathematics20203 iqtibos
    ABI

  11. Laplace and Hua Luogeng operators

    Gulmirza Khudayberganov, Askar Maxsetbaevich Khalknazarov, Jonibek Sh. Abdullayev

    Maqola20203 iqtibos
    ABI

  12. Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials

    I.B. Sapaev, Ganjaboy S. Boltaev, Б. Сапаев +4

    MaqolaOchiq kirishCopper-based nanomaterials and applicationsE3S Web of Conferences20232 iqtibos
    ABI

  13. Estimates the Bergman kernel for classical domains ´E. Cartan’s

    Jonibek Sh. Abdullayev

    MaqolaOchiq kirishHolomorphic and Operator TheoryЧебышевский сборник20212 iqtibos
    ABI

  14. The boundary Morera theorem for domain $\tau^+(n-1)$

    G. Khudaiberganov, Jonibek Sh. Abdullayev

    MaqolaOchiq kirishHolomorphic and Operator TheoryUfimskii Matematicheskii Zhurnal20211 iqtibos
    ABI

  15. Laurent-Hua Luogeng Series with Respect to the Matrix Ball from Space Cn [m × m]

    Gulmirza Kh. Khudayberganov, Jonibek Sh. Abdullayev

    MaqolaOchiq kirishAdvanced Topics in AlgebraJournal of Siberian Federal University Mathematics & Physics20210 iqtibos
    ABI

  16. About the Laplace transform on L1 (R+)

    Наргиза Бобоярова, Jonibek Sh. Abdullayev

    MaqolaOchiq kirish20250 iqtibos
    ABI

  17. Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions

    Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2

    PreprintOchiq kirishSemiconductor materials and interfacesSSRN Electronic Journal20250 iqtibos
    ABI

  18. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

    MaqolaOchiq kirish20260 iqtibos
    ABI