Sardor R. Kadirov

4 ta ish

Urganch davlat universiteti

1. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

   Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos

   ABIABI:AkademIndex/2025.article.000840

2. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos

   ABIABI:AkademIndex/2025.article.000841

3. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos

   ABIABI:AkademIndex/2025.article.001173

4. Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions

   Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2

   PreprintOAOchiq kirishSemiconductor materials and interfacesSSRN Electronic Journal20250 iqtibos

   ABIABI:AkademIndex/2025.preprint.000212