Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions
Jo`shqin AbdullayevUrgench State University, 220100, Urgench, UzbekistanJonibek Shakirovich AbdullayevDepartment of Physics and Chemistry, National Research University TIIAME, 100000, Tashkent, UzbekistanIbrokhim Bayramdurdiyevich SapaevTashkent University for Applied Sciences, 100095, Tashkent, UzbekistanJamoliddin Inotullaevich RazzokovInstitute of Fundamental and Applied Research, National Research University TIIAME, 100000, Tashkent, UzbekistanDavron Aslonqulovich JuraevScientific Research Center, Baku Engineering University, AZ0102, Baku, AzerbaijanEbrahim E. ElsayedDepartment of Electronics and Communications Engineering, Faculty of Engineering, Mansoura University, Mansoura, 35516, Egypt
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