A. V. Karimov

45 ta ish

Toshkent Davlat Iqtisodiyot Universiteti

1. Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

   A. V. Karimov, D. A. Karimova

   MaqolaSemiconductor materials and interfacesMaterials Science in Semiconductor Processing20035 iqtibos

   ABIABI:AkademIndex/2003.article.000100

2. Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

   A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev +1

   MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20164 iqtibos

   ABIABI:AkademIndex/2016.article.000290

3. Features of the temperature properties of a field-effect transistor in a current-limiting mode

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20134 iqtibos

   ABIABI:AkademIndex/2026.other.568790

4. Some features of photocurrent generation in single- and multibarrier photodiode structures

   A. V. Karimov, D. M. Yodgorova

   MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20103 iqtibos

   ABIABI:AkademIndex/2010.article.000151

5. A compensation method for measuring the junction temperature of a p +-p-n + silicon structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +3

   MaqolaSemiconductor materials and interfacesInstruments and Experimental Techniques20133 iqtibos

   ABIABI:AkademIndex/2013.article.000163

6. Features of the performance of a transient voltage suppressor in the pulsed mode

   A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1

   MaqolaPulsed Power Technology ApplicationsSemiconductors20133 iqtibos

   ABIABI:AkademIndex/2013.article.000241

7. Influence of neutron radiation on breakdown voltage of silicon voltage limiter

   A. Z. Rakhmatov, Д. А. Петров, A. V. Karimov +2

   MaqolaEngineering Diagnostics and ReliabilityRadioelectronics and Communications Systems20122 iqtibos

   ABIABI:AkademIndex/2012.article.000232

8. Thermoelectric converter

   A. V. Karimov, Sh. N. Bakhronov

   MaqolaAdvanced Thermoelectric Materials and DevicesTechnical Physics Letters19991 iqtibos

   ABIABI:AkademIndex/1999.article.000056

9. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

   Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

   MaqolaAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 iqtibos

   ABIABI:AkademIndex/2003.article.000217

10. Research of structures with corrugated photoreceiving surface

    A. V. Karimov

    MaqolaOAOchiq kirishOptical Coatings and GratingsSemiconductor Physics Quantum Electronics & Optoelectronics20041 iqtibos

    ABIABI:AkademIndex/2004.article.000239

11. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20081 iqtibos

    ABIABI:AkademIndex/2008.article.000339

12. Investigation of the heat transfer processes under the action of pulse power

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20121 iqtibos

    ABIABI:AkademIndex/2012.article.000230

13. Highly sensitive photodetector based on ge double-barrier punch-through structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

    MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20151 iqtibos

    ABIABI:AkademIndex/2015.article.000359

14. Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20181 iqtibos

    ABIABI:AkademIndex/2018.article.000966

15. Research of Spectral Characteristics of a Thin-Film Structure with a Metal-Semiconductor Barrier

    A. V. Karimov, D. M. Yodgorova, F. A. Giyasova

    MaqolaSurface Roughness and Optical MeasurementsFrontiers in Optics + Laser Science APS/DLS20191 iqtibos

    ABIABI:AkademIndex/2019.article.000871

16. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    BobOAOchiq kirishSemiconductor materials and interfacesInTech eBooks20111 iqtibos

    ABIABI:AkademIndex/2026.other.510896

17. Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition

    A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev

    MaqolaSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics20111 iqtibos

    ABIABI:AkademIndex/2026.other.564053

18. AFM and XRD studies of GaAs surface after anisotropic etching

    N. L. Dmitruk, V.P. Kladko, Р. В. Конакова +1

    MaqolaOptical Coatings and GratingsThe European Physical Journal Applied Physics20041 iqtibos

    ABIABI:AkademIndex/2026.other.655040

19. Solar cells of Al x Ga 1-x As/GaAs-type with microrelief boundary

    N. L. Dmitruk, O. Yu. Borkovskaya, В. П. Костылев +3

    Maqolasolar cell performance optimization20040 iqtibos

    ABIABI:AkademIndex/2004.article.000382

20. Investigation of the electrical characteristics of reteroepitaxial structures as function of microrelief and manufacturing technology features

    N. L. Dmitruk, A. V. Karimov, Р. В. Конакова +2

    Maqolasolar cell performance optimization20050 iqtibos

    ABIABI:AkademIndex/2005.article.000348

21. hotoconverters with microrelief p-n junction on a basis of p-AlxGa1-xAs – p-GaAs – n-GaAs – n+-GaAs heterojunction

    A. V. Karimov, Physics-Sun"

    MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesSemiconductor Physics Quantum Electronics & Optoelectronics20050 iqtibos

    ABIABI:AkademIndex/2005.article.000387

22. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

    И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

    Maqolasolar cell performance optimizationSemiconductors20060 iqtibos

    ABIABI:AkademIndex/2006.article.000306

23. A method for determining the thermal EMF and thermal conductivity

    D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1

    MaqolaElectric Power Systems and ControlInstruments and Experimental Techniques20060 iqtibos

    ABIABI:AkademIndex/2006.article.000331

24. Physical-technological bases of reception sharp p–n-transition

    A. V. Karimov, D. M. Yodgorova, Sh.sh. Yuldashev +1

    MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 iqtibos

    ABIABI:AkademIndex/2006.article.000447

25. Estimation of redistribution of potential in three-barrier structure

    A. V. Karimov, D. M. Yodgorova, Sh. Sh. Boltaeva +1

    MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20060 iqtibos

    ABIABI:AkademIndex/2006.article.000448