K. M. Adinaev

1 ta ish

Urganch davlat universiteti

1. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

   A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

   MaqolaSemiconductor materials and devicesTechnical Physics19970 iqtibos

   ABIABI:AkademIndex/1997.article.000193