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Kh.S. Daliev

30 ta ish

Oʻzbekiston Milliy Universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences202317 iqtibos
    ABI

  2. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Maqola199812 iqtibos
    ABI

  3. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

    Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences202311 iqtibos
    ABI

  4. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters200610 iqtibos
    ABI

  5. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

    I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 iqtibos
    ABI

  6. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20018 iqtibos
    ABI

  7. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20244 iqtibos
    ABI

  8. Defect Structure of Silicon Doped with Erbium

    Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20244 iqtibos
    ABI

  9. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    MaqolaSilicon and Solar Cell TechnologiesModern Physics Letters B19974 iqtibos
    ABI

  10. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    MaqolaAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics20212 iqtibos
    ABI

  11. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    MaqolaOchiq kirishAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20232 iqtibos
    ABI

  12. Study of Defect Structure of Silicon Doped with Dysprosium Using X-Ray Phase Analysis and Raman Spectroscopy

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +2

    MaqolaOchiq kirish20242 iqtibos
    ABI

  13. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 iqtibos
    ABI

  14. Study of a solar cell with a silicon-based photodiode structure

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20242 iqtibos
    ABI

  15. Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20242 iqtibos
    ABI

  16. Properties of Single Crystal Silicon Doped with Vanadium

    Kh.S. Daliev, Zafarjon M. Khusanov

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 iqtibos
    ABI

  17. Main properties of silicides of the Mo - Si system

    Sharifa B. Utamuradova, Kh.S. Daliev, S. A. Muzafarova +2

    MaqolaOchiq kirishIntermetallics and Advanced Alloy PropertiesE3S Web of Conferences20231 iqtibos
    ABI

  18. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    MaqolaIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 iqtibos
    ABI

  19. Silicon doped by rare earth elements - prospective material of microelectronics

    Kh.S. Daliev, S.Z. Zajnabidinov

    MaqolaSemiconductor materials and interfaces19950 iqtibos
    ABI

  20. The capacitance and IR-spectroscopy of defects in silicon and silicon structures

    S.Z. Zajnabidinov, Kh.S. Daliev

    MaqolaThermography and Photoacoustic Techniques19950 iqtibos
    ABI

  21. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    MaqolaSemiconductor materials and devicesTechnical Physics19970 iqtibos
    ABI

  22. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    MaqolaSilicon and Solar Cell Technologies20040 iqtibos
    ABI

  23. Investigation of properties of silicon doped titanium and interaction of titanium atoms with other impurities

    Kh.S. Daliev

    MaqolaIntermetallics and Advanced Alloy Properties20040 iqtibos
    ABI

  24. Europium effect on the property of metal insulator silicon (MIS) structures

    Kh.S. Daliev

    MaqolaSemiconductor materials and devices20050 iqtibos
    ABI

  25. Transient capacitance spectroscopy of silicon MIS-structures with an impurity of vanadium

    Kh.S. Daliev

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20170 iqtibos
    ABI