Maqola

Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

Kh.S. DalievUlughbek State University, Vuzgorodok, Tashkent, 700095, UzbekistanSharifa B. UtamuradovaUlughbek State University, Vuzgorodok, Tashkent, 700095, UzbekistanI. Kh. KhamidzhonovUlughbek State University, Vuzgorodok, Tashkent, 700095, UzbekistanA. Zh. AkbarovUlughbek State University, Vuzgorodok, Tashkent, 700095, UzbekistanI. K. MirzairovaUlughbek State University, Vuzgorodok, Tashkent, 700095, UzbekistanZh. AkimovaUlughbek State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

Inorganic Materialsjournal2001en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Silicon Nanostructures and Photoluminescence Semiconductor materials and interfaces Solid-state spectroscopy and crystallography

Identifikatorlar

DOI: 10.1023/a:1017556212569

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