Shakhrukh Kh. Daliev

24 ta ish

Oʻzbekiston Milliy Universiteti

1. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

   MaqolaOAOchiq kirishAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics202312 iqtibos

   ABIABI:AkademIndex/2023.article.000722

2. Features of the behavior of lanthanum and hafnium atoms in silicon

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters200610 iqtibos

   ABIABI:AkademIndex/2006.article.000051

3. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics202310 iqtibos

   ABIABI:AkademIndex/2023.article.000820

4. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20248 iqtibos

   ABIABI:AkademIndex/2026.other.290705

5. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20235 iqtibos

   ABIABI:AkademIndex/2023.article.000971

6. Raman Spectroscopy of Gamma-Irradiated Silicon Doped with Rhodium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Dilmurod A. Rakhmanov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20255 iqtibos

   ABIABI:AkademIndex/2025.article.001212

7. Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +2

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20253 iqtibos

   ABIABI:AkademIndex/2025.article.015874

8. On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures

   Shakhrukh Kh. Daliev, Fayzulla A. Saparov

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20233 iqtibos

   ABIABI:AkademIndex/2026.other.402564

9. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

   Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 iqtibos

   ABIABI:AkademIndex/2023.article.002748

10. Influence of Gold on Structural Defects of Silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20242 iqtibos

    ABIABI:AkademIndex/2024.article.002871

11. Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +3

    MaqolaOAOchiq kirishIon-surface interactions and analysisEast European Journal of Physics20252 iqtibos

    ABIABI:AkademIndex/2025.article.001644

12. Study of a solar cell with a silicon-based photodiode structure

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20242 iqtibos

    ABIABI:AkademIndex/2026.other.467177

13. Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20242 iqtibos

    ABIABI:AkademIndex/2026.other.467178

14. Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

    Shakhrukh Kh. Daliev

    MaqolaOAOchiq kirishIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology20181 iqtibos

    ABIABI:AkademIndex/2018.article.000622

15. Energy Spectrum of Defective Centers in Silicon Doped with Molybdenum

    Shakhrukh Kh. Daliev, Shoira Usmanova, Anifa Paluanova +21

    MaqolaOAOchiq kirishSemiconductor materials and interfacesInternational Journal of Emerging Trends in Engineering Research20201 iqtibos

    ABIABI:AkademIndex/2020.article.002161

16. INFLUENCE OF THE INTERFACE ON THE ELECTRICAL CHARACTERISTICS OF MIS STRUCTURES

    Shakhrukh Kh. Daliev, Fayzulla A. Saparov

    MaqolaEngineering Diagnostics and ReliabilityEuropean Science Review20221 iqtibos

    ABIABI:AkademIndex/2026.other.516067

17. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    MaqolaSilicon and Solar Cell Technologies20040 iqtibos

    ABIABI:AkademIndex/2004.article.000377

18. Influence of thermal treatment on characteristics of silicon doped by lanthanium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    MaqolaSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 iqtibos

    ABIABI:AkademIndex/2006.article.000426

19. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

    MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20200 iqtibos

    ABIABI:AkademIndex/2020.article.005153

20. EFFECT OF GADOLINIUM ATOMS ON DEFECT FORMATION IN SILICON DOPED WITH MOLYBDENUM IMPURITIES

    Shakhrukh Kh. Daliev, Anifa Paluanova

    MaqolaSilicon Nanostructures and PhotoluminescenceEuropean Science Review20210 iqtibos

    ABIABI:AkademIndex/2021.article.008327

21. DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS

    Shakhrukh Kh. Daliev, Javokhir A. Ergashev

    MaqolaSilicon Nanostructures and PhotoluminescenceEuropean Science Review20220 iqtibos

    ABIABI:AkademIndex/2022.article.007542

22. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

    Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

    MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

    ABIABI:AkademIndex/2025.article.009030

23. Influence of Cooling Rate on Structural and Electrophysical Changes in Zirconium-Doped Silicon (Si + Zr)

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Шерзодбек Исмоилов

    MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesInternational Journal of Independent Research Studies20250 iqtibos

    ABIABI:AkademIndex/2025.article.011068

24. Calculated Forbidden Bandgap of Si₃MnS Phase in Supercell (1Х1Х3) and Experimentally Determined Forbidden Bandgap of Si<MnS>

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, A.Sh. Mavlyanov +1

    MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos

    ABIABI:AkademIndex/2025.article.015827