D.A. Rakhmanov

2 ta ish

Oʻzbekiston Milliy Universiteti

1. PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS

   Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20235 iqtibos

   ABIABI:AkademIndex/2023.article.000971

2. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20263 iqtibos

   ABIABI:AkademIndex/2026.article.010369