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AkademIndex

Xizmatlar

U. P. Asatova

9 ta ish

Urganch davlat universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  2. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI

  3. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 iqtibos
    ABI

  4. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    A.S. Saidov, A. Yu. Leĭderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20201 iqtibos
    ABI

  5. Features of Liquid–Phase Epitaxy of (InSb)<sub>1–z</sub>(Sn2)<sub>z</sub> Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

    Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

    MaqolaSemiconductor Quantum Structures and Devices20221 iqtibos
    ABI

  6. The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon

    G. Aripov, A. É. Atamuratov, U. P. Asatova +2

    MaqolaElectric Power Systems and Control19950 iqtibos
    ABI

  7. Особенности вольт-амперной характеристики гетероструктуры n-GaP--p-(InSb)-=SUB=-1-x-=/SUB=-(Sn-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

    А Саидов, А.Ю. Лейдерман, Sh.N. Usmonov +1

    MaqolaOchiq kirish20200 iqtibos
    ABI

  8. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, A.S. Saidov +2

    MaqolaPhase-change materials and chalcogenides20240 iqtibos
    ABI

  9. First-principles study of cooperative GaP incorporation and defect clustering in silicon

    Shahzod Masharipov, Amin Saidov, U. P. Asatova +1

    Maqola20260 iqtibos
    ABI