Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures
A.S. SaidovNPO Fizika-Solntse, Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. N. UsmonovPhysicotechnical Institute of the Academy of Sciences of the Republic of UzbekistanU. P. AsatovaNPO Fizika-Solntse, Physicotechnical Institute of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
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ABI
Annotatsiya
By the method of liquid phase epitaxy, the epitaxial layers of a substitutional solid solution of the (InSb)1 − x (Sn2) x (1 ≤ x ≤ 0.05) p type of conductivity on nGe substrates were grown from a limited volume of an indium solution melt. It has been found that during the heating of the structure in the dark, an electrical current and voltage are generated in it.
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