Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

The possibility of growing single-crystal substitutional (InSb)1 − x (Sn2) x alloy (0 ≤ x ≤ 0.05) on the GaAs substrate by liquid-phase epitaxy from the In solution melt is established. The X-ray diffraction patterns and spectral and current-voltage characteristics of obtained n-GaAs-p-(InSb)1 − x (Sn2) x heterostructures are studied at different temperatures. The lattice parameters of the (InSb)1 − x (Sn2) x alloy are determined. It is found that the forward portion of the current-voltage characteristic of such structures at low voltages (up to 0.7 V) is described by the exponential dependence I = I 0exp(qV/ckT), and at high voltages (V > 0.9 V), there is a portion of sublinear increase in the current with the voltage V ≈ V 0exp(Jad). The experimental results are interpreted based on the injection depletion theory. It is shown that the product of mobility of majority carriers by the concentration of deep-level impurities increases as the temperature increases.

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