Особенности вольт-амперной характеристики гетероструктуры n-GaP--p-(InSb)-=SUB=-1-x-=/SUB=-(Sn-=SUB=-2-=/SUB=-)-=SUB=-x-=/SUB=-

The current-voltage characteristic of n-GaP--p-(InSb)1-x(Sn2)x (0 ≤ х ≤ 0.05) heterostructures has been studied. It has been shown that at low voltages V < 0.5 V, the current-voltage characteristic is described by the exponential law: I = I0exp (qV /ckT), and at large ones from 0.5 to 1.8 V power laws: I = A*V m with different values of the coefficient A and exponent m at various voltages. At higher voltages - from 2.10 to 2.48 V, a sublinear part is observed, which is described by the law: V= V0*exp(Iad / S).

Hali tarjima qilinmagan