A. M. Akhmedov

9 ta ish

Uzbe ikromjon alijonov Mexanizatsiyalash Muhandislari Instituti

1. Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

   A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202113 iqtibos

   ABIABI:AkademIndex/2021.article.000597

2. Dielectric and microwave properties of ceramics of the Bi-Ti-O system

   Halina Sauchuk, Natallia Yurkevich, A. M. Akhmedov +3

   MaqolaOAOchiq kirishFerroelectric and Piezoelectric MaterialsE3S Web of Conferences20236 iqtibos

   ABIABI:AkademIndex/2023.article.001382

3. The influence of production conditions on the electrophysical parameters of piezoceramics for different applications

   A. M. Akhmedov, Galina Sauchuk, Natallia Yurkevich +3

   MaqolaOAOchiq kirishFerroelectric and Piezoelectric MaterialsE3S Web of Conferences20216 iqtibos

   ABIABI:AkademIndex/2026.other.287205

4. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

   A.S. Saidov, Sh. N. Usmonov, D. V. Saparov +1

   MaqolaSilicon Nanostructures and PhotoluminescenceApplied Solar Energy20202 iqtibos

   ABIABI:AkademIndex/2026.other.388019

5. Processes of Current Transport in p-Si-n-(Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(GaP)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Heterostructure Produced by Liquid Phase Epitaxy

   A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos

   ABIABI:AkademIndex/2022.article.000903

6. Features of Liquid–Phase Epitaxy of (InSb)_1–z(Sn2)_z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates

   Shukrullo Usmonov, U. P. Asatova, A. M. Akhmedov

   MaqolaSemiconductor Quantum Structures and Devices20221 iqtibos

   ABIABI:AkademIndex/2022.article.002742

7. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

   D. V. Saparov, A.S. Saidov, Sh. N. Usmonov +3

   PreprintOAOchiq kirishGaN-based semiconductor devices and materialsResearch Square20230 iqtibos

   ABIABI:AkademIndex/2023.preprint.000184

8. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

   A.S. Saidov, M. U. Kalanov, D. V. Saparov +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos

   ABIABI:AkademIndex/2024.article.005519

9. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

   A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos

   ABIABI:AkademIndex/2025.article.007804