U. Kh. Kurbanova

3 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

   М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

   MaqolaSemiconductor materials and interfacesSemiconductors19995 iqtibos

   ABIABI:AkademIndex/2026.other.392894

2. Effect of nickel doping on the spectral sensitivity of silicon solar cells

   Nurillo Zikrillayev, Z. T. Kenzhaev, Timur Ismailov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesE3S Web of Conferences20234 iqtibos

   ABIABI:AkademIndex/2023.article.001501

3. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 iqtibos

   ABIABI:AkademIndex/2024.article.008623