M. M. Shoabdurakhimova

3 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

   MaqolaSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 iqtibos

   ABIABI:AkademIndex/2026.other.441311

2. Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

   Zikrillayev Kh. F., K. S. Ayupov, G. H. Mavlonov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 iqtibos

   ABIABI:AkademIndex/2022.article.000912

3. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 iqtibos

   ABIABI:AkademIndex/2024.article.008623