Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models
G. F. KaravaevSiberian Physicotechnical Institute at Tomsk State University, Siberian Division, Russian Academy of Sciences, Tomsk, RussiaВ. Н. ЧернышовSiberian Physicotechnical Institute at Tomsk State University, Siberian Division, Russian Academy of Sciences, Novosobornaya pl. 1, Tomsk, 634050, Russia
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The X-electron resonance tunneling in AlAs/GaAs(111) heterostructures with AlAs electrodes was considered. Calculations of the model with potential discontinuities at the boundaries were carried out using the scattering matrix method. The complex band structure was calculated by the empirical pseudopotential method. Resonance peaks in the transmission coefficients, related to X-states in AlAs and L-states in GaAs, were found. A model describing these processes is suggested.
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