S. D. Raevskiĭ

1 ta ish

Fizika-Texnika Instituti

1. Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

   Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2

   MaqolaGaN-based semiconductor devices and materialsTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000263