R. Boxus

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Catholic University of Leuven

1. The Voltage-Gating Process of the Voltage-Dependent Anion Channel Is Sensitive to Ion Flow

   Martin Zizi, Cynthia Byrd, R. Boxus +1

   MaqolaOAOchiq kirish19982 iqtibos

   ABIABI:AkademIndex/2026.other.157581