N. A. Yakusheva

1 ta ish

Russian Academy of Sciences

1. Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt

   К. С. Журавлев, Т. С. Шамирзаев, N. A. Yakusheva

   Maqola19982 iqtibos

   ABIABI:AkademIndex/2026.other.531015