A. Nylandsted Larsen

4 ta ish

Aarhus University

1. Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy

   M. F. Fyhn, J. Lundsgaard Hansen, J. Chevallier +1

   Maqola19993 iqtibos

   ABIABI:AkademIndex/2026.other.378322

2. Direct observations of the vacancy and its annealing in germanium

   J. Slotte, Simo Kilpeläinen, Filip Tuomisto +2

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.489667

3. Divacancy defects in germanium studied using deep-level transient spectroscopy

   M. Christian Petersen, A. Nylandsted Larsen, A. Mesli

   Maqola20102 iqtibos

   ABIABI:AkademIndex/2026.other.489673

4. Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

   S. Brotzmann, H. Bracht, J. Lundsgaard Hansen +5

   Maqola20082 iqtibos

   ABIABI:AkademIndex/2026.other.489684