E. G. Tishkovskiǐ

1 ta ish

Russian Academy of Sciences

1. Redistribution of phosphorus implanted into silicon doped heavily with boron

   E. G. Tishkovskiǐ, V.I. Obodnikov, A. A. Taskin +2

   Maqola20002 iqtibos

   ABIABI:AkademIndex/2026.other.380254