N. Mestres

1 ta ish

Institute of Materials Science of Barcelona

1. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

   N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

   Maqola20004 iqtibos

   ABIABI:AkademIndex/2026.other.396897