C. Hallin

1 ta ish

ABB (Sweden)

1. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

   Q. Wahab, A. Ellison, Anne Henry +4

   Maqola20002 iqtibos

   ABIABI:AkademIndex/2026.other.498861