Anne Henry

2 ta ish

Linköping University

1. Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

   Q. Wahab, A. Ellison, Anne Henry +4

   Maqola20002 iqtibos

   ABIABI:AkademIndex/2026.other.498861

2. Carrier Removal in Electron Irradiated 4H and 6H SiC

   M. Mikelsen, Ulrike Großner, J. H. Bleka +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20080 iqtibos

   ABIABI:AkademIndex/2008.article.000120