M. Yu. Adylov

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

   Б. Э. Эгамбердиев, M. Yu. Adylov

   MaqolaIon-surface interactions and analysisTechnical Physics Letters20012 iqtibos

   ABIABI:AkademIndex/2026.other.144424