V. V. Afanas’ev

1 ta ish

Catholic University of Leuven

1. Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2

   A. Stesmans, V. V. Afanas’ev

   Maqola20023 iqtibos

   ABIABI:AkademIndex/2026.other.624793