I. V. Antonova

2 ta ish

Новосибирский государственный университет

1. Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

   E. P. Neustroev, S. A. Smagulova, I. V. Antonova +1

   Maqola20043 iqtibos

   ABIABI:AkademIndex/2026.other.184727

2. Swift heavy-ion irradiation of graphene oxide: Localized reduction and formation of sp-hybridized carbon chains

   Andrzej Olejniczak, Nadezhda A. Nebogatikova, А. В. Фролов +3

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.251660