L. N. Safronov

1 ta ish

Russian Academy of Sciences

1. Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

   E. P. Neustroev, S. A. Smagulova, I. V. Antonova +1

   Maqola20043 iqtibos

   ABIABI:AkademIndex/2026.other.184727