Н. Н. Герасименко

2 ta ish

Moscow State Institute of Electronics and Mathematics

1. Properties of self-organized SiGe nanostructures formed by ion implantation

   Yu. N. Parkhomenko, A. I. Belogorokhov, Н. Н. Герасименко +2

   Maqola20046 iqtibos

   ABIABI:AkademIndex/2026.other.251134

2. Quantum-dimensional structures produced by ion implantation

   Н. Н. Герасименко, Yu. N. Parhomenko, V.Yu. Troitskiy +4

   Maqola20033 iqtibos

   ABIABI:AkademIndex/2026.other.492986