A. M. Emel’yanov

5 ta ish

Fizika-Texnika Instituti

1. Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

   Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceMaterials science forum19970 iqtibos

   ABIABI:AkademIndex/1997.article.000189

2. Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

   Н. А. Соболев, A. M. Emel’yanov, Yu. A. Kudryavtsev +8

   MaqolaSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 iqtibos

   ABIABI:AkademIndex/1997.article.000191

3. Defect Engineering in Si: Ho Light-Emitting Structure Technology

   Н. А. Соболев, A. M. Emel’yanov, R. N. Kyutt +1

   MaqolaSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19990 iqtibos

   ABIABI:AkademIndex/1999.article.000080

4. Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

   Н. А. Соболев, A. M. Emel’yanov, E. I. Shek +1

   MaqolaSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20030 iqtibos

   ABIABI:AkademIndex/2003.article.000127

5. SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions

   A. M. Emel’yanov, Н. А. Соболев, T. M. Mel’nikova +1

   MaqolaSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos

   ABIABI:AkademIndex/2005.article.000109