L. М. Portsel

5 ta ish

Russian Academy of Sciences

1. Doping of silicon with selenium by diffusion from the gas phase

   Yu. A. Astrov, V. B. Shuman, L. М. Portsel +1

   Maqola20143 iqtibos

   ABIABI:AkademIndex/2026.other.408793

2. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

   Yu. A. Astrov, Stephen A. Lynch, V. B. Shuman +3

   Maqola20133 iqtibos

   ABIABI:AkademIndex/2026.other.502336

3. Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus

   Yu. A. Astrov, В. А. Козлов, А. N. Lodygin +4

   Maqola20093 iqtibos

   ABIABI:AkademIndex/2026.other.614241

4. Development of photodetectors for image converters: Doping of silicon with selenium from the gas phase

   Yu. A. Astrov, V. B. Shuman, А. N. Lodygin +2

   Maqola20082 iqtibos

   ABIABI:AkademIndex/2026.other.675401

5. Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters

   Yu. A. Astrov, L. М. Portsel, А. N. Lodygin +2

   MaqolaSpectroscopy and Laser ApplicationsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos

   ABIABI:AkademIndex/2005.article.000174