M. Jakšić

1 ta ish

Ruđer Bošković Institute

1. Study of Ion Induced Damage in 4H-SiC

   Alessandro Lo Giudice, P. Oliveira, F. Fizzotti +6

   MaqolaOAOchiq kirishIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20050 iqtibos

   ABIABI:AkademIndex/2005.article.000188