Fabio Bergamini

1 ta ish

Institute for Microelectronics and Microsystems

1. Current Analysis of Ion Implanted p<sup>+</sup>/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

   Roberta Nipoti, Fabio Bergamini, F. Moscatelli +3

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/2006.article.000136