R. V. Parfeniev

2 ta ish

Russian Academy of Sciences

1. Grain Boundary Influence on the Electrical Properties of Tellurium Microstructure Ingots and Nanocluster Crystals

   V. A. Berezovets, I. I. Farbshteǐn, R. V. Parfeniev +2

   MaqolaPhase-change materials and chalcogenidesMaterials science forum20061 iqtibos

   ABIABI:AkademIndex/2006.article.000253

2. Solidification of Anisotropic Semiconducting Material - Tellurium under Microgravity Conditions

   R. V. Parfeniev, I. I. Farbshteǐn, I. L. Shul’pina +5

   MaqolaOAOchiq kirishPhase-change materials and chalcogenidesMaterials science forum20001 iqtibos

   ABIABI:AkademIndex/2026.other.654952