А. Эшонхонов

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

   Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

   MaqolaOAOchiq kirishSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 iqtibos

   ABIABI:AkademIndex/2007.article.000340