A. S. Mallaev
6 ta ish
National Pedagogic University
Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods
Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2
MaqolaOchiq kirishSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 iqtibosABIInvestigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them
Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev
MaqolaOchiq kirishIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry20070 iqtibosABIDISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT
Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev
MaqolaOchiq kirishSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal20210 iqtibosABI