Б.Ч. Холлиев

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them

   Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev

   MaqolaOAOchiq kirishIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry20070 iqtibos

   ABIABI:AkademIndex/2007.article.000375